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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
NT6CL512T32AM-H0	LPDDR3	NT6CL512T32AM-H0	DRAM LPDDR3	NANYA/南亚	16Gb	x32	2133Mbps	1.2V	-30°C~105°C	FBGA-178	Developing		10.5mm×11.5mm×0.83mm					商业级				Click view
H9CCNNNCLGALAR-NVD	LPDDR3	H9CCNNNCLGALAR-NVD	DRAM LPDDR3	SK HYNIX/海力士	32Gb	512Mx32	1066MHz	1.2V		BGA												Click view
H9CCNNNBJTALAR-NUD	LPDDR3	H9CCNNNBJTALAR-NUD	DRAM LPDDR3	SK HYNIX/海力士	16GB	512Mx32	1866MHz	1.2V		FBGA-178												Click view
H9CCNNNCLTCLAR-NUM	LPDDR3	H9CCNNNCLTCLAR-NUM	DRAM LPDDR3	SK HYNIX/海力士	32GB	512Mx32	1866MHz	1.2V		FBGA-178												Click view
H9CCNNN8JTBLAR-NUD	LPDDR3	H9CCNNN8JTBLAR-NUD	DRAM LPDDR3	SK HYNIX/海力士	8GB	256Mx32	933Mbps	1.2V		BGA												Click view
K3QF3F30BM-AGCF	LPDDR3	K3QF3F30BM-AGCF	LPDDR3	SAMSUNG/三星	16 Gb	x64	1866 Mbps	1.8 / 1.2 / 1.2 V	-25 ~ 85 °C	253 FBGA	EOL										Click view
K4E8E324EB-EGCG	LPDDR3	K4E8E324EB-EGCG	LPDDR3	SAMSUNG/三星	8 Gb	x32	2133 Mbps	1.8 / 1.2 / 1.2 V	-25 ~ 85 °C	178FBGA	批量生产	PDF								三代低功耗双倍数据率同步动态随机存储器	Click view
K3QF6F60AM-FGCF	LPDDR3	K3QF6F60AM-FGCF	LPDDR3	SAMSUNG/三星	24Gb	x64	1866 Mbps	1.8 / 1.2 / 1.2 V	-25 ~ 85 °C	256FBGA	Mass Production	PDF									Click view
KMGX6001BA-B514009	LPDDR3	KMGX6001BA-B514009	LPDDR3	SAMSUNG/三星			1866 Mbps			221 FBGA	Mass Production			eMMC 5.1	32 GB	24 Gb				多芯片封装	Click view
H9CCNNN4GTMLAR	LPDDR3	H9CCNNN4GTMLAR	DRAM LPDDR3	SK HYNIX/海力士	4Gb	x32		1.8V/1.2V/1.2V		FBGA-178	Mass production								Low Power			Click view
H9CCNNNCPTALBR-NUD	LPDDR3	H9CCNNNCPTALBR-NUD	DRAM LPDDR3	SK HYNIX/海力士						BGA												Click view
H9CCNNNBLTALAR	LPDDR3	H9CCNNNBLTALAR	DRAM LPDDR3	SK HYNIX/海力士	16Gb	x32		1.8V/1.2V/1.2V		FBGA-253	Mass production								Low Power			Click view
H9CCNNNBJTALAR-NVD	LPDDR3	H9CCNNNBJTALAR-NVD	DRAM LPDDR3	SK HYNIX/海力士						BGA-178												Click view
H9CCNNNBLTALAR-NVDR	LPDDR3	H9CCNNNBLTALAR-NVDR	LPDDR3	SK hynix/海力士	16Gb	x32		1.8V-1.2V-1.2V		PKG：178	Mass production										Click view
H54GE6AYRHX270	LPDDR4	H54GE6AYRHX270	LPDDR4	SK hynix/海力士	6GB		4266Mbps	1.8V / 1.1V / 0.6V									CS				Click view
H54G46BYYPX053	LPDDR4	H54G46BYYPX053	LPDDR4	SK hynix/海力士	2GB		4266Mbps	1.8V / 1.1V / 1.1V		200Ball							MP				Click view
H54G36AYRBX257	LPDDR4	H54G36AYRBX257	LPDDR4	SK hynix/海力士	1GB		4266Mbps	1.8V / 1.1V / 0.6V		200Ball							CS				Click view
MT53D1024M32D4DT-046 WT	LPDDR4	MT53D1024M32D4DT-046 WT	LPDDR4	MICRON/美光	32Gb	x32	DDR4-4266			D9WQG		PDF					Production				Click view
K4F8E304HB-MGCJ	LPDDR4	K4F8E304HB-MGCJ	DRAM LPDDR4	SAMSUNG/三星	8Gb	x32	3733 Mbps	1.8/1.1/1.1V	-25°C~85°C	FBGA-200	EOL											Click view
K4F4E3S4HF-MGCJ	LPDDR4	K4F4E3S4HF-MGCJ	DRAM LPDDR4	SAMSUNG/三星	4Gb	x32	3733Mbps	1.8/1.1/1.1V		BGA												Click view