第11页_DRAM_Product Category_Product Center_bga-memory

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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
MT52L1G32D4PG-107 WT:B	LPDDR3	MT52L1G32D4PG-107 WT:B	DRAM LPDDR3	MICRON/美光	32Gb	x32	1866mb/s	1.8V/1.2V	-30°C~85°C	FBGA-178						D9SSK		1.071ns		Click view
MT52L512M32D2PF-107 WT:B	LPDDR3	MT52L512M32D2PF-107 WT:B	DRAM LPDDR3	MICRON/美光	16Gb	x32	1866mb/s	1.8V/1.2V	-30°C~85°C	FBGA-178						D9SSF		1.071ns		Click view
MT52L256M32D1PF-107 WT:B	LPDDR3	MT52L256M32D1PF-107 WT:B	DRAM LPDDR3	MICRON/美光	8Gb	x32	1866mb/s	1.8V/1.2V	-30°C~85°C	FBGA-178						D9SRZ		1.071ns		Click view
MT52L256M32D1PF-093 WT:B	LPDDR3	MT52L256M32D1PF-093 WT:B	DRAM LPDDR3	MICRON/美光	8Gb	x32		1.2V	-30°C~85°C	FBGA-178										Click view
NT6CL512T32AM-H1	LPDDR3	NT6CL512T32AM-H1	LPDDR3	Nanya/南亚	16Gb	x32	1866Mbps	1.2V	-35C~105C	178-ball BGA		PDF		Developing			Commercial		Click view
K4E8E324EB-EGCF	LPDDR3	K4E8E324EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	48Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production									Click view
NT6CL128M32DM-H1	LPDDR3	NT6CL128M32DM-H1	LPDDR3	Nanya/南亚	4Gb	x32	1866Mbps	1.2V	-30C~105C	178-ball BGA		PDF		Developing			Commercial	低power行动DRAM-LPDDR3	Click view
K4EBE304ED-EGCG	LPDDR3	K4EBE304ED-EGCG	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL									Click view
K4EBE304EC-EGCG	LPDDR3	K4EBE304EC-EGCG	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL									Click view
K4E8E324ED-EGCG	LPDDR3	K4E8E324ED-EGCG	DRAM LPDDR3	SAMSUNG/三星	8Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL									Click view
K4E8E324EB-AGCF	LPDDR3	K4E8E324EB-AGCF	DRAM LPDDR3	SAMSUNG/三星	8Gb	256Mx32	1866Mbps	1.8V/1.2V	-25°C~85°C	FBGA-168										Click view
K4E6E304EC-AGCF	LPDDR3	K4E6E304EC-AGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-168	Mass Production									Click view
K4E6E304ED-EGCG	LPDDR3	K4E6E304ED-EGCG	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL									Click view
K4E6E304EC-EGCG	LPDDR3	K4E6E304EC-EGCG	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL									Click view
K4E6E304EB-EGCF	LPDDR3	K4E6E304EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	186 Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production									Click view
K4B4G1646E-BYK0	LPDDR3	K4B4G1646E-BYK0	DRAM LPDDR3	SAMSUNG/三星	4Gb	512Mx8	1600Mbps	1.35V	0°C~85°C	FBGA-96	Mass Production									Click view
K4B4G0846E-BYMA	LPDDR3	K4B4G0846E-BYMA	DRAM LPDDR3	SAMSUNG/三星	4Gb	512Mx8	1866Mbps	1.35V	0°C~85°C	FBGA-78	Mass Production									Click view
NT6CL256T32BM-H2	LPDDR3	NT6CL256T32BM-H2	DRAM LPDDR3	NANYA/南亚	8Gb	x32	1600Mbps	1.2V	-25°C~85°C	BGA-178	Mass Production		10.5mm×11.5mm×0.8mm		商业级					Click view
NT6CL256M32AM-H1	LPDDR3	NT6CL256M32AM-H1	DRAM LPDDR3	NANYA/南亚	8Gb	x32	1866Mbps	1.2V	-35°C~105°C	BGA-178	Developing		10.5mm×11.5mm×0.83mm		商业级					Click view
K4E6E304EC-EGCF	LPDDR3	K4E6E304EC-EGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	512Mx32	1866Mbps	1.8V/1.2V	-25°C~85°C	FBGA-178										Click view