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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
K4F8E3S4HD-GFCL	DDR4	K4F8E3S4HD-GFCL	DRAM DDR4	SAMSUNG/三星	8Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production				Click view
K4F6E3S4HM-MGCJ	DDR4	K4F6E3S4HM-MGCJ	DRAM DDR4	SAMSUNG/三星	16Gb	x32	3733Mbps	1.8/1.1/1.1V	-25°C~85°C	FBGA-200	Mass Production				Click view
MTA18ASF2G72HZ-2G6E4	DDR4	MTA18ASF2G72HZ-2G6E4	DRAM DDR4	MICRON/美光	16GB		2666Mb/s			BGA	EOL				Click view
MT40A512M16TB-062E:R	DDR4	MT40A512M16TB-062E:R	DRAM DDR4	MICRON/美光	8Gb	x16	3200 MT/s		0°C~95°C	BGA-96				D9WWP	Click view
MT40A512M16LY-062E IT:E TR	DDR4	MT40A512M16LY-062E IT:E TR	DRAM DDR4	MICRON/美光	8Gb	512Mx16		1.14V~1.26V	-40℃~95℃	FBGA-96	EOL				Click view
MT40A512M16LY-062E IT:E	DDR4	MT40A512M16LY-062E IT:E	DRAM DDR4	MICRON/美光	8Gb	512Mx16		1.14V~1.26V	-40℃~95℃	BGA-96	EOL				Click view
MT40A2G8VA-062E:B	DDR4	MT40A2G8VA-062E:B	DRAM DDR4	MICRON/美光	16Gb				0°C~95°C	BGA-78				D9XPF	Click view
MT40A2G8VA-062E IT:B TR	DDR4	MT40A2G8VA-062E IT:B TR	DRAM DDR4	MICRON/美光	16Gb	2Gx8	3200Mbps	1.2V	-40°C~95°C	BGA-78					Click view
MT40A2G8JC-062E IT:E TR	DDR4	MT40A2G8JC-062E IT:E TR	DRAM DDR4	MICRON/美光	16Gb	2Gx8		1.14V~1.26V	-40℃~95℃	BGA-78					Click view
MT40A1G16KD-062E:E	DDR4	MT40A1G16KD-062E:E	DRAM DDR4	MICRON/美光	16Gb	1Gx16		1.14V~1.26V	0°C~95°C	TFBGA-96	EOL				Click view
MT40A1G16KD-062E IT:E TR	DDR4	MT40A1G16KD-062E IT:E TR	DRAM DDR4	MICRON/美光	16Gb	1Gx16		1.14V~1.26V	-40°C~95°C	TFBGA-96					Click view
K4AAG165WA-BCWE	DDR4	K4AAG165WA-BCWE	DRAM DDR4	SAMSUNG/三星	16Gb	1Gx16	3200Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production				Click view
K4AAG165WA-BCTD	DDR4	K4AAG165WA-BCTD	DRAM DDR4	SAMSUNG/三星	16Gb	1Gx16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production				Click view
K4A8G165WC-BCWE	DDR4	K4A8G165WC-BCWE	DRAM DDR4	SAMSUNG/三星	8Gb	512Mx16	3200Mbps	1.2V	0°C~85°C	FBGA-96	Sample				Click view
K4A8G085WC-BCWE	DDR4	K4A8G085WC-BCWE	DRAM DDR4	SAMSUNG/三星	8Gb	1Gx8	3200Mbps	1.2V	0°C~85°C	FBGA-78	Sample				Click view
MT40A512M16LY-075:E	DDR4	MT40A512M16LY-075:E	DRAM DDR4	MICRON/美光	8Gb	512Mx16		1.14V~1.26V	0°C~95°C	FBGA-96	EOL			D9WFH	Click view
K4A8G085WC-BCTD	DDR4	K4A8G085WC-BCTD	DRAM DDR4	SAMSUNG/三星	8Gb	1Gx8	2666Mbps	1.2V	0°C~85°C	FBGA-78	Mass Production				Click view
K4A4G165WE-BCRC	DDR4	K4A4G165WE-BCRC	DRAM DDR4	SAMSUNG/三星	4Gb	256Mx16	2400Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production				Click view
K4A4G085WE-BCRC	DDR4	K4A4G085WE-BCRC	DRAM DDR4	SAMSUNG/三星	4Gb	512Mx8	2400Mbps	1.2V	0°C~85°C	FBGA-78	Mass Production				Click view
NT5AD512M16C4-HR	DDR4	NT5AD512M16C4-HR	DRAM DDR4	NANYA/南亚	8Gb	x16	2666Mbps	1.2V	0°C~95°C	BGA-96	Developing	7.5mm×13mm×0.8mm	商业级		Click view