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model

specification

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capacity

framework

speed

working voltage

operation temperature

product details

NT5AD512M16A4-HR

DDR4

NT5AD512M16A4-HR

DRAM DDR4

NANYA/南亚

8Gb

x16

2666Mbps

1.2V

0°C~95°C

FBGA-96

Mass Production

7.5mm×13mm×0.8mm

商业级

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NT5AD256M16D4-HR

DDR4

NT5AD256M16D4-HR

DRAM DDR4

NANYA/南亚

4Gb

x16

2666Mbps

1.2V

0°C~95°C

TFBGA-96

Developing

7.5mm×13mm×0.8mm

商业级

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K4A4G165WE-BCWE

DDR4

K4A4G165WE-BCWE

DRAM DDR4

SAMSUNG/三星

4Gb

256M x 16

3200 Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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H5ANBG6NAMR-XNC

DDR4

H5ANBG6NAMR-XNC

DRAM DDR4

SK HYNIX/海力士

32Gb

x16

3200Mbps

1.2V

0℃~85℃

FBGA-96

Mass Production

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H5ANAG6NCMR-XNC

DDR4

H5ANAG6NCMR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0℃~85℃

FBGA-96

Mass Production

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H5ANAG6NCMR-VKC

DDR4

H5ANAG6NCMR-VKC

DRAM DDR4

SK HYNIX/海力士

16G

1Gx16

2666Mbps

1.2V

0°C~85°C

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K4A8G165WC-BCTD

DDR4

K4A8G165WC-BCTD

DDR4

SAMSUNG/三星

8 Gb

512M x 16

2666 Mbps

1.2 V

0 ~ 85 °C

96 FBGA

Mass Production

PDF

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H5ANAG6NDMR-XNC

DDR4

H5ANAG6NDMR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass production

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H5ANAG6NCJR-XNC

DDR4

H5ANAG6NCJR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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H5AN8G8NDJR-XNC

DDR4

H5AN8G8NDJR-XNC

DRAM DDR4

SK HYNIX/海力士

8Gb

x8

3200Mbps

1.2V

0°C~85°C

FCBGA-78

Mass Production

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H5AN8G8NCJR-VKC

DDR4

H5AN8G8NCJR-VKC

DRAM DDR4

SK HYNIX/海力士

8Gb

x8

2666Mbps

1.2V

0°C~85°C

FCBGA-78

Mass Production

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H5AN8G6NDJR-XNCR

DDR4

H5AN8G6NDJR-XNCR

DRAM DDR4

SK HYNIX/海力士

BGA-96

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H5AN8G6NDJR-XNC

DDR4

H5AN8G6NDJR-XNC

DRAM DDR4

SK HYNIX/海力士

8Gb

x16

3200Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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H5AN8G6NCJR-XNC

DDR4

H5AN8G6NCJR-XNC

DRAM DDR4

SK HYNIX/海力士

8Gb

x16

3200Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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H5AN8G6NCJR-VKC

DDR4

H5AN8G6NCJR-VKC

DRAM DDR4

SK HYNIX/海力士

8Gb

x16

2666Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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H5AN4G8NBJR-VKC

DDR4

H5AN4G8NBJR-VKC

DRAM DDR4

SK HYNIX/海力士

4Gb

x8

2666Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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H5AN4G6NBJR-VKC

DDR4

H5AN4G6NBJR-VKC

DRAM DDR4

SK HYNIX/海力士

4Gb

x16

2666Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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M321RAGA0B20-CWK

DDR5

M321RAGA0B20-CWK

DRAM DDR5

SAMSUNG/三星

128GB

4800Mbps

1.1V

BGA-288

Mass Production

RDIMM

4R x 4

(2H 3DS 8G x 4) x 40

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H5TQ4G63EFR-TEC

DRAM

H5TQ4G63EFR-TEC

DDR SDRAM

SK HYNIX/海力士

4G

256Mx16

2133Mbps

1.5V

0°C~95°C

FBGA-96

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MT53D512M32D2DS-046 WT:D

DRAM

MT53D512M32D2DS-046 WT:D

DRAM

MICRON/美光

PDF

SDRAM存储器

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