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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
KLUDG4U1EA-B0C1
UFS
SAMSUNG/三星
128GB
1.8/3.3V
-25°C~85°C
BGA-153
EOL
11.5mm x13mm x1.0mm
2.1
G3 2Lane
Click view
KLM8G1GETF-B041
eMMC
8GB
1.8~3.3V
FBGA-153
Mass Production
1120/TRAY
5.1
HS400
K3LKCKC0BM-MGCP
LPDDR5
64 Gb
x32
6400 Mbps
1.8 / 1.05 / 0.9 / 0.5 V
-25 ~ 85 °C
315 FBGA
K3LKBKB0BM-MGCP
32 Gb
K3KLALA0DM-MFCU
LPDDR5X
128 Gb
8533 Mbps
-40 ~ 95 °C
Sample
KHBBC4B03B-MC1JT00
HBM
36GB
HBM3E-8.0Gbps
KHBB84A03B-MC1JT00
24GB
KHBAC4A03D-MC1HT00
24Gb
HBM3-6.4Gbps
KHBA84A03D-MC1HT00
16Gb
KHAA84901B-JC17T00
HBM2E-3.6Gbps
KHA884901X-MC13TNX
8Gb
HBM2-2.4Gbps
KHA884901X-MC12TIF
HBM2-2.0Gbps
K3QF3F30BM-AGCF
LPDDR3
16 Gb
x64
1866 Mbps
1.8 / 1.2 / 1.2 V
253 FBGA
K3UH5H50MM-NGCJ
LPDDR4X
32Gb
3733 Mbps
1.8 / 1.1 / 0.6 V
366FBGA
K4U8E3S4AD-CHCL
8 Gb
4266 Mbps
-40 ~ 105 °C
200FBGA
四代超低功耗双倍数据率同步动态随机存储器
K4E8E324EB-EGCG
2133 Mbps
178FBGA
批量生产
PDF
三代低功耗双倍数据率同步动态随机存储器
KLMCG2UCTB-B041T02
eMMC 5.1
64 GB
1.8 / 3.3 V
11.5 x 13 x 0.8 mm
K3QF6F60AM-FGCF
256FBGA
K4U6E3S4AB-MGCL
200 FBGA
K4A8G165WC-BCTD
DDR4
512M x 16
2666 Mbps
1.2 V
0 ~ 85 °C
96 FBGA