Powerful brand new chip ·Brand new·discounted·and abundant
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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
KMGX6001BA-B514009
LPDDR3
SAMSUNG/三星
1866 Mbps
221 FBGA
Mass Production
eMMC 5.1
32 GB
24 Gb
多芯片封装
Click view
K4UBE3D4AM-GHCL
LPDDR4X
32Gb
x32
4266 Mbps
1.8 / 1.1 / 0.6 V
-40 ~ 105 °C
200FBGA
四代超低功耗双倍数据率同步动态随机存储器
K4E6E304EC-EGCF
DRAM LPDDR3
16Gb
512Mx32
1866Mbps
1.8V/1.2V
-25°C~85°C
FBGA-178
K4E8E324EB-AGCF
8Gb
256Mx32
FBGA-168
K9F2G08U0D-SIB0
FLASH
2G
256Mx8
2.7v~3.6v
-40°C~85°C
TS0P-48
MZQLB3T8HALS-00003
SSD
3.84TB
KLMBG4GESD-B02P
eMMC
32GB
BGA
KLMAG2GESD-C02P
16GB
1.8V/3.3V
FBGA-100
K4F8E304HB-MGCH
DRAM DDR4
8GB
K3UH7H70BM-AGCL
DRAM LPDDR4X
64GB
x64
K4F4E3S4HF-MGCJ
DRAM LPDDR4
4Gb
3733Mbps
1.8/1.1/1.1V
K4UJE3T4AA-MGCL
M321RAGA0B20-CWK
DRAM DDR5
128GB
4800Mbps
1.1V
BGA-288
RDIMM
4R x 4
(2H 3DS 8G x 4) x 40
K4EBE304EB-EGCF
1.8/1.2/1.2V
K4EBE304EC-EGCF
2133Mbps
K4U6E3S4AB-MGCL
4266Mbps
1.8/1.1/0.6V
FBGA-200
K3UH7H70AM-JGCL
FBGA-432
K3UH5H50AM-JGCL
K4F8E304HB-MGCJ
3733 Mbps
EOL
K3UH5H50AM-JGCR