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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
MT53D512M32D2DS-046 AAT:D	LPDDR4	MT53D512M32D2DS-046 AAT:D	LPDDR4	MICRON/美光	16Gb	512M x32	2133MHz	0.6V	-40C to +105C	200-ball WFBGA			4266MTPS	CL = Programmable	COMPONENT	LPDDR4 16G X32 WFBGA	Click view
MT53E768M32D4DT-053 AAT:E	LPDDR4	MT53E768M32D4DT-053 AAT:E	LPDDR4	MICRON/美光	24Gb	768M x32	1866MHz	0.6V	-40C to +105C	200-ball VFBGA		Production	3733MTPS	CL = Programmable	COMPONENT	LPDDR4 24G X32 VFBGA	Click view
MT53D1024M32D4DT-046 AIT:D	LPDDR4	MT53D1024M32D4DT-046 AIT:D	LPDDR4	MICRON/美光	32Gb	1G x32	2133MHz	0.6V	-40C to +95C	200-ball VFBGA		End of Life	4266MTPS	CL = Programmable		LPDDR4 32G X32 VFBGA	Click view
K4FBE3D4HM-TFCL	LPDDR4	K4FBE3D4HM-TFCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production							Click view
K4FBE3D4HM-GFCL	LPDDR4	K4FBE3D4HM-GFCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	3733Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production							Click view
MT53E1G32D4NQ-046 WT:F	LPDDR4	MT53E1G32D4NQ-046 WT:F	DRAM LPDDR4	MICRON/美光	32Gb	x32			-25°C~85°C	FBGA				D9ZGW				Click view
K4FBE3D4HM-THCL	LPDDR4	K4FBE3D4HM-THCL	DRAM LPDDR4	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/1.1V	-40℃~105℃	BGA	Mass Production							Click view
MT53E2G32D4NQ-046WT:A	LPDDR4	MT53E2G32D4NQ-046WT:A	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA				D9ZCL				Click view
K4FHE3D4HA-TFCL	LPDDR4	K4FHE3D4HA-TFCL	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production							Click view
K4FHE3D4HA-GFCL	LPDDR4	K4FHE3D4HA-GFCL	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production							Click view
K4FHE3D4HA-THCL	LPDDR4	K4FHE3D4HA-THCL	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production							Click view
K4F6E3S4HM-TFCL	LPDDR4	K4F6E3S4HM-TFCL	DRAM LPDDR4	SAMSUNG/三星	16Gb	x32	4266Mbps	1.8/1.1/1.1V	-40°C~95°C	FBGA-200	Mass Production							Click view
K4F6E3S4HM-THCL	LPDDR4	K4F6E3S4HM-THCL	DRAM LPDDR4	SAMSUNG/三星	16Gb	x32	4266Mbps	1.8/1.1/1.1V	-40℃~105℃	FBGA-200	Mass Production							Click view
MT53E2G32D8QD-046 WT:E	LPDDR4	MT53E2G32D8QD-046 WT:E	DRAM LPDDR4	MICRON/美光	128Gb	x32			-25°C~85°C	FBGA				D9WLV				Click view
K4F8E3S4HD-GHCL	LPDDR4	K4F8E3S4HD-GHCL	DRAM LPDDR4	SAMSUNG/三星	8Gb	x32	4266Mbps	1.8/1.1/1.1V	-40℃~105℃	FBGA-200	Mass Production							Click view
MT53E2G32D4NQ-046 WT:C	LPDDR4	MT53E2G32D4NQ-046 WT:C	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA				D8BQX				Click view
MT53E2G32D4NQ-046 WT:A	LPDDR4	MT53E2G32D4NQ-046 WT:A	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA				D9ZCL				Click view
MT53E1G32D4NQ-046 WT:E	LPDDR4	MT53E1G32D4NQ-046 WT:E	DRAM LPDDR4	MICRON/美光	32Gb	1Gx32	4266Mbps	1.1 V	-30°C~85°C	VFBGA-200	Production							Click view
MT53E1G32D2NP-046 WT:A	LPDDR4	MT53E1G32D2NP-046 WT:A	DRAM LPDDR4	MICRON/美光	32Gb	x32			-25°C~85°C	FBGA				D9ZCK				Click view
MT53E512M32D2NP-053 RS WT:E	LPDDR4	MT53E512M32D2NP-053 RS WT:E	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32	3733Mbps	1.1V	-30°C~85°C	BGA	Production							Click view