Powerful brand new chip ·Brand new·discounted·and abundant
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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
NT6AN256T32AV-J1
LPDDR4
Nanya/南亚
8Gb
x32
4267Mbps
1.1V
-30C~105C
200-ball FBGA
PDF
Developing
Commercial
低power行动DRAM-LPDDR4
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NT6AN512T32AV-J2
16Gb
3733Mbps
MT53E512M32D2NP-046 WT:E
DRAM LPDDR4
MICRON/美光
512Mx32
4266Mbps
-30°C~85°C
FBGA-200
Production
MT53D512M64D4HR-053 WT:D
32Gb
x64
TSOP
D9VKN
MT53D512M32D2DS-053 WT:D TR
WFBGA-200
MT53D512M32D2DS-053 WT:D
-25°C~85°C
D9WHZ
MT53D1024M32D4DT-053 WT:D
1Gx32
VFBGA-200
MT53E256M32D2DS-053 WT:B
3733 Mb/s
1.8V/1.1V/1.1V
10mm×14.5mm×0.8mm
D9WRB
K4FHE3D4HM-MHCJ
SAMSUNG/三星
24Gb
1.8/1.1/1.1V
-40℃~105℃
EOL
K4F8E3S4HD-MGCL
Mass Production
H9HCNNNBKUMLHR-NMO
SK HYNIX/海力士
2GB
x16
H9HKNNNFBMMVAR-NEH
H9HCNNNDAMMLHR-NEE
H9HCNNNBKUMLXR-NEI
-40°C~95°C
H54GE6CYRBX262N
48Gb
768Mx64
H54G56CYRBX247N
32GB
2Gx16
1.1V/1.8V
-25℃~85℃
H54G46CYRBX267N
H9HCNNNCPUMLHR-NME
4GB
H9HCNNNBPUMLHR-NMO
H9HCNNNBKUMLXR-NEE