Powerful brand new chip ·Brand new·discounted·and abundant
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model
specification
brand
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K4B2G1646F-BYMA
DDR3
DRAM DDR3
SAMSUNG/三星
2Gb
128Mx16
1866 Mbps
1.35V
0°C~85°C
96 FBGA
EOL
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NT5CC256M16ER-EK
NANYA/南亚
4Gb
x16
1866Mbps
0°C~95°C
BGA-96
Mass Production
8mm×13mm×0.8mm
商业级
K4B2G1646F-BCNB
2133 Mbps
1.5V
FBGA-96
NT5CC128M16JR-EKI
-40°C~95°C
Developing
7.5mm×13mm×0.8mm
工业级
K4B2G1646F-BCMA
NT5CC128M16IP-DI
1600Mbps
K4B2G0846F-BYMA
256Mx8
FBGA-78
NT5CB512M8EQ-FL
x8
2133Mbps
BGA-78
8mm×10.5mm×0.8mm
K4B1G1646I-BYK0
1Gb
64Mx16
NT5CB256M16ER-FL
NT5CB128M16JR-FL
K4B2G0846F-BCMA
NT5CC256M8IN-DI
VFBGA-78
NT5CB256M16DP-EK
VFBGA-96
9mm×13mm×0.8mm
K4E8E324EB-EGCG
8Gb
x32
1.8/1.2/1.2V
-25°C~85°C
FBGA-178
NT5CC256M8JQ-EK
TFBGA-78
7.5mm×10.5mm×0.8mm
NT5CB64NGP-EK
H5TQ2G83GFR-RDC
SK HYNIX/海力士
-0.4V~1.80V
0℃~85℃
H5TQ4G63EFR-RDC
H5TC4G83EFR-PBA