K4F8E3S4HD-GFCL

DDR4

K4F8E3S4HD-GFCL

DRAM DDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4F6E3S4HM-MGCJ

DDR4

K4F6E3S4HM-MGCJ

DRAM DDR4

SAMSUNG/三星

16Gb

x32

3733Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

Mass Production

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MTA18ASF2G72HZ-2G6E4

DDR4

MTA18ASF2G72HZ-2G6E4

DRAM DDR4

MICRON/美光

16GB

2666Mb/s

BGA

EOL

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MT40A512M16TB-062E:R

DDR4

MT40A512M16TB-062E:R

DRAM DDR4

MICRON/美光

8Gb

x16

3200 MT/s

0°C~95°C

BGA-96

D9WWP

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MT40A512M16LY-062E IT:E TR

DDR4

MT40A512M16LY-062E IT:E TR

DRAM DDR4

MICRON/美光

8Gb

512Mx16

1.14V~1.26V

-40℃~95℃

FBGA-96

EOL

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MT40A512M16LY-062E IT:E

DDR4

MT40A512M16LY-062E IT:E

DRAM DDR4

MICRON/美光

8Gb

512Mx16

1.14V~1.26V

-40℃~95℃

BGA-96

EOL

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MT40A2G8VA-062E:B

DDR4

MT40A2G8VA-062E:B

DRAM DDR4

MICRON/美光

16Gb

0°C~95°C

BGA-78

D9XPF

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MT40A2G8VA-062E IT:B TR

DDR4

MT40A2G8VA-062E IT:B TR

DRAM DDR4

MICRON/美光

16Gb

2Gx8

3200Mbps

1.2V

-40°C~95°C

BGA-78

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MT40A2G8JC-062E IT:E TR

DDR4

MT40A2G8JC-062E IT:E TR

DRAM DDR4

MICRON/美光

16Gb

2Gx8

1.14V~1.26V

-40℃~95℃

BGA-78

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MT40A1G16KD-062E:E

DDR4

MT40A1G16KD-062E:E

DRAM DDR4

MICRON/美光

16Gb

1Gx16

1.14V~1.26V

0°C~95°C

TFBGA-96

EOL

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MT40A1G16KD-062E IT:E TR

DDR4

MT40A1G16KD-062E IT:E TR

DRAM DDR4

MICRON/美光

16Gb

1Gx16

1.14V~1.26V

-40°C~95°C

TFBGA-96

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K4AAG165WA-BCWE

DDR4

K4AAG165WA-BCWE

DRAM DDR4

SAMSUNG/三星

16Gb

1Gx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4AAG165WA-BCTD

DDR4

K4AAG165WA-BCTD

DRAM DDR4

SAMSUNG/三星

16Gb

1Gx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A8G165WC-BCWE

DDR4

K4A8G165WC-BCWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Sample

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K4A8G085WC-BCWE

DDR4

K4A8G085WC-BCWE

DRAM DDR4

SAMSUNG/三星

8Gb

1Gx8

3200Mbps

1.2V

0°C~85°C

FBGA-78

Sample

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MT40A512M16LY-075:E

DDR4

MT40A512M16LY-075:E

DRAM DDR4

MICRON/美光

8Gb

512Mx16

1.14V~1.26V

0°C~95°C

FBGA-96

EOL

D9WFH

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K4A8G085WC-BCTD

DDR4

K4A8G085WC-BCTD

DRAM DDR4

SAMSUNG/三星

8Gb

1Gx8

2666Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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K4A4G165WE-BCRC

DDR4

K4A4G165WE-BCRC

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2400Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A4G085WE-BCRC

DDR4

K4A4G085WE-BCRC

DRAM DDR4

SAMSUNG/三星

4Gb

512Mx8

2400Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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NT5AD512M16C4-HR

DDR4

NT5AD512M16C4-HR

DRAM DDR4

NANYA/南亚

8Gb

x16

2666Mbps

1.2V

0°C~95°C

BGA-96

Developing

7.5mm×13mm×0.8mm

商业级

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