MT52L1G32D4PG-107 WT:B

LPDDR3

MT52L1G32D4PG-107 WT:B

DRAM LPDDR3

MICRON/美光

32Gb

x32

1866mb/s

1.8V/1.2V

-30°C~85°C

FBGA-178

D9SSK

1.071ns

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MT52L512M32D2PF-107 WT:B

LPDDR3

MT52L512M32D2PF-107 WT:B

DRAM LPDDR3

MICRON/美光

16Gb

x32

1866mb/s

1.8V/1.2V

-30°C~85°C

FBGA-178

D9SSF

1.071ns

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MT52L256M32D1PF-107 WT:B

LPDDR3

MT52L256M32D1PF-107 WT:B

DRAM LPDDR3

MICRON/美光

8Gb

x32

1866mb/s

1.8V/1.2V

-30°C~85°C

FBGA-178

D9SRZ

1.071ns

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MT52L256M32D1PF-093 WT:B

LPDDR3

MT52L256M32D1PF-093 WT:B

DRAM LPDDR3

MICRON/美光

8Gb

x32

1.2V

-30°C~85°C

FBGA-178

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NT6CL512T32AM-H1

LPDDR3

NT6CL512T32AM-H1

LPDDR3

Nanya/南亚

16Gb

x32

1866Mbps

1.2V

-35C~105C

178-ball BGA

PDF

Developing

Commercial

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K4E8E324EB-EGCF

LPDDR3

K4E8E324EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

48Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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NT6CL128M32DM-H1

LPDDR3

NT6CL128M32DM-H1

LPDDR3

Nanya/南亚

4Gb

x32

1866Mbps

1.2V

-30C~105C

178-ball BGA

PDF

Developing

Commercial

低功率行动DRAM-LPDDR3

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K4EBE304ED-EGCG

LPDDR3

K4EBE304ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4EBE304EC-EGCG

LPDDR3

K4EBE304EC-EGCG

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E8E324ED-EGCG

LPDDR3

K4E8E324ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

8Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E8E324EB-AGCF

LPDDR3

K4E8E324EB-AGCF

DRAM LPDDR3

SAMSUNG/三星

8Gb

256Mx32

1866Mbps

1.8V/1.2V

-25°C~85°C

FBGA-168

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K4E6E304EC-AGCF

LPDDR3

K4E6E304EC-AGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-168

Mass Production

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K4E6E304ED-EGCG

LPDDR3

K4E6E304ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E6E304EC-EGCG

LPDDR3

K4E6E304EC-EGCG

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E6E304EB-EGCF

LPDDR3

K4E6E304EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

186 Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4B4G1646E-BYK0

LPDDR3

K4B4G1646E-BYK0

DRAM LPDDR3

SAMSUNG/三星

4Gb

512Mx8

1600Mbps

1.35V

0°C~85°C

FBGA-96

Mass Production

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K4B4G0846E-BYMA

LPDDR3

K4B4G0846E-BYMA

DRAM LPDDR3

SAMSUNG/三星

4Gb

512Mx8

1866Mbps

1.35V

0°C~85°C

FBGA-78

Mass Production

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NT6CL256T32BM-H2

LPDDR3

NT6CL256T32BM-H2

DRAM LPDDR3

NANYA/南亚

8Gb

x32

1600Mbps

1.2V

-25°C~85°C

BGA-178

Mass Production

10.5mm×11.5mm×0.8mm

商业级

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NT6CL256M32AM-H1

LPDDR3

NT6CL256M32AM-H1

DRAM LPDDR3

NANYA/南亚

8Gb

x32

1866Mbps

1.2V

-35°C~105°C

BGA-178

Developing

10.5mm×11.5mm×0.83mm

商业级

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K4E6E304EC-EGCF

LPDDR3

K4E6E304EC-EGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

512Mx32

1866Mbps

1.8V/1.2V

-25°C~85°C

FBGA-178

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