MT48LC16M16A2B4-6A IT:G

DRAM

MT48LC16M16A2B4-6A IT:G

DRAM

MICRON/美光

256Mb

16Mx16

3V~3.6V

-40℃~85℃

FBGA-54

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MT48LC16M16A2P-6A IT:G TR

DRAM

MT48LC16M16A2P-6A IT:G TR

DRAM

MICRON/美光

256Mb

16Mx16

3V~3.6V

-40℃~85℃

TSOP-54

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MT46V64M8CY-5B:J TR

DRAM

MT46V64M8CY-5B:J TR

DRAM

MICRON/美光

512Mb

64Mx8

2.5V~2.7V

0°C~70°C

FBGA-60

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MT46H64M16LFBF-5 IT:B TR

DRAM

MT46H64M16LFBF-5 IT:B TR

DRAM

MICRON/美光

1Gb

64Mx16

1.7V~1.95V

-40℃~85℃

VFBGA-60

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H25G9TCX8CX326A

DRAM

H25G9TCX8CX326A

DRAM

SK HYNIX/海力士

-40°C~125°C

BGA

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H5AN4G6NBJR-UHC

DRAM

H5AN4G6NBJR-UHC

DDR SDRAM

SK HYNIX/海力士

4G

256Mx16

2400Mbps

1.2V

0°C~85°C

BGA-96

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H5GC8H24AJR-R2C

GDDR5

H5GC8H24AJR-R2C

GDDR5

SK hynix/海力士

8Gb

DDR 3.5GHz

1.35V / 1.35V

FCBGA

MP

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MT51J256M32HF-80

GDDR5

MT51J256M32HF-80

GDDR5

MICRON/美光

8Gb

x32

0C to +95C

D9TCB

PDF

Production

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K4G80325FC-HC25

GDDR5

K4G80325FC-HC25

DRAM GDDR5

SAMSUNG/三星

8Gb

256Mx32

8.0 Gbps

FBGA-170

EOL

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H56G8H24AIR-S2C

GDDR6

H56G8H24AIR-S2C

GDDR6

SK hynix/海力士

8Gb

DDR 7.0GHz

1.35V / 1.35V

FCBGA

MP

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H56G42AS4DX014

GDDR6

H56G42AS4DX014

GDDR6

SK hynix/海力士

16Gb

DDR 8.0GHz

1.35V / 1.35V

FCBGA

CS

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K4ZAF325BM-HC16

GDDR6

K4ZAF325BM-HC16

DRAM GDDR6

SAMSUNG/三星

16Gb

512Mx32

16.0Gbps

FBGA-180

EOL

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MT61K256M32JE-14:A

GDDR6

MT61K256M32JE-14:A

DRAM GDDR6

MICRON/美光

8Gb

256Mx32

1.31V~1.39V

0°C~95°C

TFBGA-180

EOL

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K4Z80325BC-HC14

GDDR6

K4Z80325BC-HC14

DRAM GDDR6

SAMSUNG/三星

8Gb

256Mx32

14.0 Gbps

FBGA-180

Mass Production

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MT46H32M16LFBF-5 IT:C

LPDDR

MT46H32M16LFBF-5 IT:C

LPDDR

MICRON/美光

D9LQQ

512Mb

Production

Width: x16

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MT46H32M32LFB5-5 IT:B TR

LPDDR

MT46H32M32LFB5-5 IT:B TR

DRAM LPDDR

MICRON/美光

1Gb

32Mx32

1.7V~1.95V

-40℃~85℃

VFBGA-90

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MT46H32M16LFBF-5 IT:C TR

LPDDR

MT46H32M16LFBF-5 IT:C TR

DRAM LPDDR

MICRON/美光

512Mb

32Mx16

1.7V~1.95V

-40℃~85℃

VFBGA-60

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K4EBE304EB-EGCF

LPDDR3

K4EBE304EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4EBE304EC-EGCF

LPDDR3

K4EBE304EC-EGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K3QF4F40BM-AGCF

LPDDR3

K3QF4F40BM-AGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x64

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-253

Mass Production

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