第4页_DDR3_首页展示_bga-memory - specializing in Samsung, Micro

Powerful brand new chip
·Brand new·discounted·and abundant

K4UBE3D4AB-MGCL| KLMAG1JETD-B041|

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Index
Product Category
- DRAM
- SSD
- eMMC
- eMCP
- FLASH
- UFS
Branding
- Samsung
- Hynix
- Kioxia
- Micron
- Nanya
- SanDisk
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Branding

Branding

Samsung Hynix Kioxia Micron Nanya SanDisk
Product Category

DRAM SSD eMMC eMCP FLASH UFS

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model	specification	brand	capacity	framework	speed	working voltage	operation temperature	product details
K4B4G1646E-BCMA		K4B4G1646E-BCMA	DRAM DDR3	SAMSUNG/三星	4Gb	512Mx8	1866Mbps	1.5V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4B8G1646D-MYK0		K4B8G1646D-MYK0	DRAM DDR3	SAMSUNG/三星	8Gb	512Mx16	1600Mbps	1.35V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4B4G0846D-BCMA		K4B4G0846D-BCMA	DRAM DDR3	SAMSUNG/三星	4Gb	512Mx8	1866Mbps	1.5V	0°C~85°C	FBGA-78	EOL																														Click view
K4B2G1646F-BHMA		K4B2G1646F-BHMA	DRAM DDR3	SAMSUNG/三星	2Gb	128Mx16	1866Mbps	1.35V	-40℃~105℃	FBGA-96	Mass Production																														Click view
K4B2G1646F-BFMA		K4B2G1646F-BFMA	DRAM DDR3	SAMSUNG/三星	2Gb	128Mx16	1866Mbps	1.35V	-40°C~95°C	FBGA-96	Mass Production																														Click view
K4B4G1646D-BHMA		K4B4G1646D-BHMA	DRAM DDR3	SAMSUNG/三星	4Gb	256Mx16	1866Mbps	1.35V	-40℃~105℃	FBGA-96	Mass Production																														Click view
K4B4G1646D-BFMA		K4B4G1646D-BFMA	DRAM DDR3	SAMSUNG/三星	4Gb	256Mx16	1866Mbps	1.35V	-40°C~95°C	FBGA-96	Mass Production																														Click view
K4B4G1646E-BYMA		K4B4G1646E-BYMA	DRAM DDR3	SAMSUNG/三星	4Gb	512Mx8	1866Mbps	1.35V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4B4G1646E-BCNB		K4B4G1646E-BCNB	DRAM DDR3	SAMSUNG/三星	4Gb	512Mx8	2133Mbps	1.5V	0°C~85°C	FBGA-96	Mass Production																														Click view

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Q Q | 2207226434

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Address | No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen