第2页_DDR3_首页展示_bga-memory - specializing in Samsung, Micro

Branding

Branding

Samsung Hynix Kioxia Micron Nanya SanDisk
Product Category

DRAM SSD eMMC eMCP FLASH UFS

Latest transactions

IDNumberMoneyTime

PRODUCT MODEL

For more detailed information, please Contact Us ；

Latest transactions

IDNumberMoneyTime

model	brand	capacity	framework	speed	working voltage	operation temperature	product details
NT5CB128M16JR-FL	NT5CB128M16JR-FL	DRAM DDR3	NANYA/南亚	2Gb	x16	2133Mbps	1.5V	0°C~95°C	BGA-96	Developing	7.5mm×13mm×0.8mm	商业级		Click view
NT5CB256M16ER-FL	NT5CB256M16ER-FL	DRAM DDR3	NANYA/南亚	4Gb	x16	2133Mbps	1.5V	0°C~95°C	BGA-96	Mass Production	8mm×13mm×0.8mm	商业级		Click view
NT5CB512M8EQ-FL	NT5CB512M8EQ-FL	DRAM DDR3	NANYA/南亚	4Gb	x8	2133Mbps	1.5V	0°C~95°C	BGA-78	Mass Production	8mm×10.5mm×0.8mm	商业级		Click view
NT5CC128M16IP-DI	NT5CC128M16IP-DI	DRAM DDR3	NANYA/南亚	2Gb	x16	1600Mbps	1.35V	0°C~95°C	BGA-96	Mass Production	8mm×13mm×0.8mm	商业级		Click view
NT5CC128M16JR-EKI	NT5CC128M16JR-EKI	DRAM DDR3	NANYA/南亚	2Gb	x16	1866Mbps	1.35V	-40°C~95°C	BGA-96	Developing	7.5mm×13mm×0.8mm	工业级		Click view
NT5CC256M16ER-EK	NT5CC256M16ER-EK	DRAM DDR3	NANYA/南亚	4Gb	x16	1866Mbps	1.35V	0°C~95°C	BGA-96	Mass Production	8mm×13mm×0.8mm	商业级		Click view
NT5CC256M16ER-EKI	NT5CC256M16ER-EKI	DRAM DDR3	NANYA/南亚	4Gb	x16	1866Mbps	1.35V	-40°C~95°C	BGA-96	Mass Production	8mm×13mm×0.8mm	工业级		Click view
NT5CC512M8EN-EK	NT5CC512M8EN-EK	DRAM DDR3	NANYA/南亚	4Gb	x8	1866Mbps	1.35V	0°C~95°C	BGA-78	Mass Production	8mm×10.5mm×0.8mm	商业级		Click view
NT5CC64M16GP-DI	NT5CC64M16GP-DI	DRAM DDR3	NANYA/南亚	1Gb	x16	1600Mbps	1.35V	0°C~95°C	BGA-96	Mass Production	8mm×13mm×0.8mm	商业级		Click view
NT5CC128M16JR-EK	NT5CC128M16JR-EK	DRAM DDR3	NANYA/南亚	2Gb	x16	1866Mbps	1.35V	0°C~95°C	BGA-96	Developing	7.5mm×13mm×0.8mm	商业级		Click view
MT41K512M16VRN-107 IT:P	MT41K512M16VRN-107 IT:P	DRAM DDR3	MICRON/美光	8Gb	x16	1866 MT/s		-40°C~95°C	FBGA-96				D9XLQ	Click view
MT41K512M16VRP-107 IT:P TR	MT41K512M16VRP-107 IT:P TR	DRAM DDR3	MICRON/美光	8Gb	512Mx16	1866Mbps	1.35V	0°C~85°C	FBGA-96					Click view
MT41K128M16JT-125 IT:K	MT41K128M16JT-125 IT:K	DRAM DDR3	MICRON/美光	2Gb	x16	1600 MT/s		-40°C~95°C	FBGA-96				D9PSK	Click view
MT41K256M16TW-107 IT:P	MT41K256M16TW-107 IT:P	DRAM DDR3	MICRON/美光	4Gb	256Mx16		1.283V~1.45V	-40°C~95°C	TFBGA-96					Click view
MT41K256M16TW-107:P	MT41K256M16TW-107:P	DRAM DDR3	MICRON/美光	4Gb	x16	1866 MT/s		0°C~95°C	FBGA-96				D9SHD	Click view
MT41K512M16HA-107:A	MT41K512M16HA-107:A	DRAM DDR3	MICRON/美光	8Gb	512Mx16		1.283V~1.45V	0°C~95°C	TFBGA-96	EOL				Click view
MT41K512M16VRP-107 IT:P	MT41K512M16VRP-107 IT:P	DRAM DDR3	MICRON/美光	8Gb	512Mx16	1866 MT/s	1.283V~1.45V	-40°C~95°C	TFBGA-96				D9ZWN	Click view
MT41K512M8DA-107:P	MT41K512M8DA-107:P	DRAM DDR3	MICRON/美光	4Gb	x8	1866 MT/s		0°C~95°C	FBGA				D9SGQ	Click view
MT41K64M16TW-107:J	MT41K64M16TW-107:J	DRAM DDR3	MICRON/美光	1Gb	64Mx16	1866 MT/s	1.283V~1.45V	0°C~95°C	FBGA-96				D9SFT	Click view
MT48LC2M32B2P-6A IT:J	MT48LC2M32B2P-6A IT:J	DRAM DDR3	MICRON/美光	64Mbit	2Mx32		3V~3.6V	-40℃~85℃	TSOP-86	EOL				Click view

Even if you take one piece, its still wholesale price。

Get wholesale price

存储芯球 bga-memory.com

2207226434 | Q Q

xunfengda@qq.com | Email

No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen | Address

Q Q | 2207226434

Email | xunfengda@qq.com

Address | No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen