H9HCNNNBPUMLHR-NMO

H9HCNNNBPUMLHR-NMO

DRAM LPDDR4

SK HYNIX/海力士

2GB

x16

3733Mbps

1.8V/1.1V/1.1V

-40℃~105℃

FBGA-200

Mass Production

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H9HCNNNCPUMLHR-NME

H9HCNNNCPUMLHR-NME

DRAM LPDDR4

SK HYNIX/海力士

4GB

x16

3733Mbps

1.8V/1.1V/1.1V

-25℃~85℃

FBGA-200

Mass Production

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H54G46CYRBX267N

H54G46CYRBX267N

DRAM LPDDR4

SK HYNIX/海力士

16Gb

FBGA-200

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H54G56CYRBX247N

H54G56CYRBX247N

DRAM LPDDR4

SK HYNIX/海力士

32GB

2Gx16

1.1V/1.8V

-25℃~85℃

FBGA-200

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H54GE6CYRBX262N

H54GE6CYRBX262N

DRAM LPDDR4

SK HYNIX/海力士

48Gb

768Mx64

1.1V

FBGA-200

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H9HCNNNBKUMLXR-NEI

H9HCNNNBKUMLXR-NEI

DRAM LPDDR4

SK HYNIX/海力士

2GB

x16

4266Mbps

1.8V/1.1V/1.1V

-40°C~95°C

FBGA-200

Mass Production

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H9HCNNNDAMMLHR-NEE

H9HCNNNDAMMLHR-NEE

DRAM LPDDR4

SK HYNIX/海力士

FBGA-200

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H9HKNNNFBMMVAR-NEH

H9HKNNNFBMMVAR-NEH

DRAM LPDDR4

SK HYNIX/海力士

2GB

x16

3733Mbps

1.8V/1.1V/1.1V

-40℃~105℃

FBGA-200

Mass Production

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H9HCNNNBKUMLHR-NMO

H9HCNNNBKUMLHR-NMO

DRAM LPDDR4

SK HYNIX/海力士

2GB

x16

3733Mbps

1.8V/1.1V/1.1V

-40℃~105℃

FBGA-200

Mass Production

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K4F8E3S4HD-MGCL

K4F8E3S4HD-MGCL

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

Mass Production

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K4FHE3D4HM-MHCJ

K4FHE3D4HM-MHCJ

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

3733Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

EOL

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K4F8E3S4HD-GHCL

K4F8E3S4HD-GHCL

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

Mass Production

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K4F6E3S4HM-THCL

K4F6E3S4HM-THCL

DRAM LPDDR4

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

Mass Production

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K4F6E3S4HM-TFCL

K4F6E3S4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-THCL

K4FHE3D4HA-THCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-GFCL

K4FHE3D4HA-GFCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-TFCL

K4FHE3D4HA-TFCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FBE3D4HM-THCL

K4FBE3D4HM-THCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

BGA

Mass Production

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K4FBE3D4HM-GFCL

K4FBE3D4HM-GFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

3733Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FBE3D4HM-TFCL

K4FBE3D4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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