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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
MT29F2G01ABAGDWB-IT:G
FLASH
MICRON/美光
2Gb
x1
-40℃~85℃
PDFN-8
NW874
Click view
MT29F1G08ABAEAWP:E
1Gb
128Mx8
2.7V~3.6V
0°C~70°C
TSOP-48
MT25QU128ABA1EW9-0SIT
128Mb
WPDFN-8
RW141
MT25Q
Production
Multi I/O
MT25QL512ABB8ESF-0SIT
512Mb
SO-16
RW187
MT25QL256ABA8ESF-0SIT TR
256Mb
32Mx8
16-SOIC
MT25QL256ABA1EW7-0SIT
W-PDFN-8
RW163
MT25QL128ABB1ESE-0AUT
-40°C~125°C
SOIC-8
RW330
MT29F64G08CBABAWP
64Gb
x8
MT29F4G08ABADAWP-IT:D
4Gb
512Mx8
MT25QL01GBBB8ESF-0SIT TR
MT53D512M64D4HR-053 WT:D
DRAM LPDDR4
32Gb
x64
-30°C~85°C
TSOP
D9VKN
MT53D512M32D2DS-053 WT:D TR
16Gb
512Mx32
1.1V
WFBGA-200
MT53D512M32D2DS-053 WT:D
-25°C~85°C
FBGA-200
D9WHZ
MT53D1024M32D4DT-053 WT:D
1Gx32
VFBGA-200
MT41K512M8DA-107:P
DRAM DDR3
1866 MT/s
0°C~95°C
FBGA
D9SGQ
MT41K512M16HA-107:A
8Gb
512Mx16
1.283V~1.45V
TFBGA-96
EOL
MT41K256M16TW-107:P
x16
FBGA-96
D9SHD
MT41K256M16TW-107 IT:P
256Mx16
-40°C~95°C
MT41K128M16JT-125 IT:K
1600 MT/s
D9PSK
MT46H32M32LFB5-5 IT:B TR
DRAM LPDDR
32Mx32
1.7V~1.95V
VFBGA-90