第2页_LPDDR4_首页展示_bga-memory - specializing in Samsung, Micro

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DRAM SSD eMMC eMCP FLASH UFS

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Latest transactions

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model	brand	capacity	framework	speed	working voltage	operation temperature	product details
MT53D512M32D2DS-053 WT:D	MT53D512M32D2DS-053 WT:D	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32		1.1V	-25°C~85°C	FBGA-200		D9WHZ	Click view
MT53D512M32D2DS-053 WT:D TR	MT53D512M32D2DS-053 WT:D TR	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32		1.1V	-30°C~85°C	WFBGA-200			Click view
MT53D512M64D4HR-053 WT:D	MT53D512M64D4HR-053 WT:D	DRAM LPDDR4	MICRON/美光	32Gb	x64			-30°C~85°C	TSOP		D9VKN	Click view
MT53E512M32D2NP-046 WT:E	MT53E512M32D2NP-046 WT:E	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32	4266Mbps	1.1V	-30°C~85°C	FBGA-200	Production		Click view
MT53E512M32D2NP-053 RS WT:E	MT53E512M32D2NP-053 RS WT:E	DRAM LPDDR4	MICRON/美光	16Gb	512Mx32	3733Mbps	1.1V	-30°C~85°C	BGA	Production		Click view
MT53E1G32D2NP-046 WT:A	MT53E1G32D2NP-046 WT:A	DRAM LPDDR4	MICRON/美光	32Gb	x32			-25°C~85°C	FBGA		D9ZCK	Click view
MT53E1G32D4NQ-046 WT:E	MT53E1G32D4NQ-046 WT:E	DRAM LPDDR4	MICRON/美光	32Gb	1Gx32	4266Mbps	1.1 V	-30°C~85°C	VFBGA-200	Production		Click view
MT53E2G32D4NQ-046 WT:A	MT53E2G32D4NQ-046 WT:A	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA		D9ZCL	Click view
MT53E2G32D4NQ-046 WT:C	MT53E2G32D4NQ-046 WT:C	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA		D8BQX	Click view
MT53E2G32D8QD-046 WT:E	MT53E2G32D8QD-046 WT:E	DRAM LPDDR4	MICRON/美光	128Gb	x32			-25°C~85°C	FBGA		D9WLV	Click view
MT53E2G32D4NQ-046WT:A	MT53E2G32D4NQ-046WT:A	DRAM LPDDR4	MICRON/美光	64Gb	x32			-25°C~85°C	FBGA		D9ZCL	Click view
MT53E1G32D4NQ-046 WT:F	MT53E1G32D4NQ-046 WT:F	DRAM LPDDR4	MICRON/美光	32Gb	x32			-25°C~85°C	FBGA		D9ZGW	Click view
H54G68CYRBX248N	H54G68CYRBX248N	DRAM LPDDR4	SK HYNIX/海力士	8GB					FBGA-200			Click view
H9HCNNN4KUMLHR-NME	H9HCNNN4KUMLHR-NME	DRAM LPDDR4	SK HYNIX/海力士	0.5GB	x16	3733Mbps	1.8V/1.1V/1.1V	-25℃~85℃	FBGA-200	Mass production		Click view
H9HCNNN8KUMLHR-NLE	H9HCNNN8KUMLHR-NLE	DRAM LPDDR4	SK HYNIX/海力士	1GB		3200Mbps	1.8V/1.1V/1.1V	-25℃~85℃	FBGA-200	Mass production		Click view
H9HCNNN8KUMLHR-NLN	H9HCNNN8KUMLHR-NLN	DRAM LPDDR4	SK HYNIX/海力士						BGA			Click view
H9HCNNN8KUMLHR-NME	H9HCNNN8KUMLHR-NME	DRAM LPDDR4	SK HYNIX/海力士	1GB		3733Mbps	1.8V/1.1V/1.1V		FBGA-200			Click view
H9HCNNN8KUMLHR-NMI	H9HCNNN8KUMLHR-NMI	DRAM LPDDR4	SK HYNIX/海力士	1GB		3733Mbps	1.8V/1.1V/1.1V		FBGA-200	Mass production		Click view
H9HCNNNBKUMLHR-NME	H9HCNNNBKUMLHR-NME	DRAM LPDDR4	SK HYNIX/海力士	2GB	x16	3733Mbps	1.8V/1.1V/1.1V	-25℃~85℃	FBGA-200	Mass production		Click view
H9HCNNNBKUMLXR-NEE	H9HCNNNBKUMLXR-NEE	DRAM LPDDR4	SK HYNIX/海力士	2GB	x16	4266Mbps	1.8V/1.1V/1.1V	-25℃~85℃	FBGA-200	Mass Production		Click view

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Address | No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen