第2页_LPDDR3_首页展示_bga-memory - specializing in Samsung, Micro

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model	brand	capacity	framework	speed	working voltage	operation temperature	product details
H9CCNNNBJTALAR-NUD	H9CCNNNBJTALAR-NUD	DRAM LPDDR3	SK HYNIX/海力士	16GB	512Mx32	1866MHz	1.2V		FBGA-178		Click view
H9CCNNNCLGALAR-NVD	H9CCNNNCLGALAR-NVD	DRAM LPDDR3	SK HYNIX/海力士	32Gb	512Mx32	1066MHz	1.2V		BGA		Click view
K4E6E304EC-EGCF	K4E6E304EC-EGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	512Mx32	1866Mbps	1.8V/1.2V	-25°C~85°C	FBGA-178		Click view
K4B4G0846E-BYMA	K4B4G0846E-BYMA	DRAM LPDDR3	SAMSUNG/三星	4Gb	512Mx8	1866Mbps	1.35V	0°C~85°C	FBGA-78	Mass Production	Click view
K4B4G1646E-BYK0	K4B4G1646E-BYK0	DRAM LPDDR3	SAMSUNG/三星	4Gb	512Mx8	1600Mbps	1.35V	0°C~85°C	FBGA-96	Mass Production	Click view
K4E6E304EB-EGCF	K4E6E304EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	186 Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production	Click view
K4E6E304EC-EGCG	K4E6E304EC-EGCG	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL	Click view
K4E6E304ED-EGCG	K4E6E304ED-EGCG	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL	Click view
K4E6E304EC-AGCF	K4E6E304EC-AGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-168	Mass Production	Click view
K4E8E324EB-AGCF	K4E8E324EB-AGCF	DRAM LPDDR3	SAMSUNG/三星	8Gb	256Mx32	1866Mbps	1.8V/1.2V	-25°C~85°C	FBGA-168		Click view
K4E8E324ED-EGCG	K4E8E324ED-EGCG	DRAM LPDDR3	SAMSUNG/三星	8Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL	Click view
K4EBE304EC-EGCG	K4EBE304EC-EGCG	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL	Click view
K4EBE304ED-EGCG	K4EBE304ED-EGCG	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL	Click view
K4E8E324EB-EGCF	K4E8E324EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	48Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production	Click view
K3QF4F40BM-AGCF	K3QF4F40BM-AGCF	DRAM LPDDR3	SAMSUNG/三星	32Gb	x64	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-253	Mass Production	Click view
K4EBE304EC-EGCF	K4EBE304EC-EGCF	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production	Click view
K4EBE304EB-EGCF	K4EBE304EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production	Click view

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No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen | Address

Q Q | 2207226434

Email | xunfengda@qq.com

Address | No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen