第5页_DDR4_首页展示_bga-memory - specializing in Samsung, Micro

Powerful brand new chip
·Brand new·discounted·and abundant

K4UBE3D4AB-MGCL| KLMAG1JETD-B041|

QQ:2207226434

TEL: 13824331138

Index
Product Category
- DRAM
- SSD
- eMMC
- eMCP
- FLASH
- UFS
Branding
- Samsung
- Hynix
- Kioxia
- Micron
- Nanya
- SanDisk
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Branding

Branding

Samsung Hynix Kioxia Micron Nanya SanDisk
Product Category

DRAM SSD eMMC eMCP FLASH UFS

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model	specification	brand	capacity	framework	speed	working voltage	operation temperature	product details
K4F8E304HB-MGCH		K4F8E304HB-MGCH	DRAM DDR4	SAMSUNG/三星	8GB	256Mx32				BGA																															Click view
K4AAG165WA-BIWE		K4AAG165WA-BIWE	DRAM DDR4	SAMSUNG/三星	16Gb	1Gx16	3200Mbps	1.2V	-40°C~95°C	FBGA-96	Mass Production																														Click view
K4AAG165WB-BCWE		K4AAG165WB-BCWE	DRAM DDR4	SAMSUNG/三星	16Gb	4Gx4	3200Mbps	1.2V	0°C~85°C	FBGA-78	Mass Production																														Click view
K4AAG165WB-MCTD		K4AAG165WB-MCTD	DRAM DDR4	SAMSUNG/三星	16Gb	1Gx16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4ABG085WA-MCTD		K4ABG085WA-MCTD	DRAM DDR4	SAMSUNG/三星	32Gb	4Gx8	2666Mbps	1.2V	0°C~85°C	FBGA-78	Mass Production																														Click view
K4ABG165WB-MCWE		K4ABG165WB-MCWE	DRAM DDR4	SAMSUNG/三星	32Gb	2Gx16	3200Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4A4G165WF-BCTD		K4A4G165WF-BCTD	DRAM DDR4	SAMSUNG/三星	4Gb	256Mx16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4ABG165WA-MCWE		K4ABG165WA-MCWE	DRAM DDR4	SAMSUNG/三星	32Gb	2Gx16	3200Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production																														Click view
K4ABG165WA-MCTD		K4ABG165WA-MCTD	DRAM DDR4	SAMSUNG/三星	32Gb	2Gx16	2666Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production																														Click view

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Address | No. 1002 Huaqiang North Road, Saige Plaza, Futian District, Shenzhen